摘要
本文对CW Ar^+激光再结晶SOI结构材料进行了氢等离子体退火和CW CO_2激光退少.结果表明,两种退火方法都可以明显地降低背界面的界面态陷阱密度.氢等离子体处理对晶粒间界引入的界面态退火效果更显著,而CO_2激光辐照对应力引入的界面态退火作用更明显.
The hydrogen plasma annealing and CW CO_2 laser annealing on the CW Ar^+ laser re-crystallized SOI structure have been reported.The results show that two annealing methods areeffective for reducing the density of interface traps N it at the back interface.The hydrogenplasma treatment is more effective for the annealing of the interface state caused by grain bo-undaries,while CW CO_2 laser irradiation is much more favorable for the annealing of the in-terface state related to the stress.
关键词
薄膜
激光加工
半导体界面
结晶
Films
Laser Processing
Semiconductor-Insulator Interface
Interface States
Grain Boundary
Recrystallization
Hydrogen
Passivation
