摘要
本文用一线紧束缚模型(1DTB)和格林函数(GF)方法研究了杂质对金属-半导体界面电子态的影响。该模型包括一个一维半无限金属(含有单个杂质,用Koster-Slater模型描述)和一个一维半无限的半导休(用Bose和Foo的s、p轨道交替排列的模型描述).并以Ni-ZnO系统为例,对不同的杂质及其处于不同的位置时分别计算了界面处半导体一边的电子态密度和界面态能级,以此来观察杂质对界面电子态的影响.
The impurity effect on the electronic density of states of the metal-semiconductor interfa-ce is studied using the one-dimensional tight-binding approximation and the Green's functionmethod.The model contains two parts: a semi-infinite metal (containing a single impurityat site i described by the Koster-Slater model) and a semi-infinite semiconductor described bya chain of alternating s- and p- orbitals. Different impurity locations and different impurityeffective energy levels are considered.The interface local density of states at the semiconduc-tor side is calculated.
关键词
杂质
金属
半导体界面
电子态
Green's function
Tight-binding model
Electronic density of states
