摘要
本文报道了半导体InP上Al膜阳极氧化的研究,并用AES,V-V,DLTS和椭圆仪等测试方法研究了氧化膜的稳定性、电学特性、组分的纵向分布以及Al_2O_3/InP的界面特性,研究结果表明,阳极氧化Al_2O_3的介电常数为11～12,Al_2O_3/InP界面存在一个能量上连续分布的电子陷阱,DLTS峰值对应的能级位置约在E_c-E_c=0.5eV,其俘获截面约为10^(-15)cm^2,Al_2O_3/InP的界面态密度为10^(11)cm^(-2)eV^(-1)。阳极氧化Al_2O_3的稳定性要比InP自身氧化物好得多,更适于用作器件的钝化保护和扩散掩蔽膜。
The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.3×10^(13) ohm-cm. Interface state density at Al2O3/InP is about 10^(11)cm-2·eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc.
关键词
半导体界面
阳极氧化
介质薄膜
Semiconductor interface
Anodization
Dielectric thin film
