摘要
用CW Ar^+激光对B^+注入(60keV,5×10^(15)cm^(-2))非晶硅SOM材料进行辐照再结晶,获得了高灵敏度的压阻材料,其GF在30左右。结晶后的晶粒增大到10μm×40μm,且杂质分布均匀,电学性质大大提高。用该材料制备的桥路压力传感器,灵敏度为6mV/V bar,具有良好的输出线性度。
A cw Ar+ laser was used to recrystallize a-Si film which was deposited on a metal substrate covered with insulator layer and implanted with boron ions at an energy of 60keV and a dose of 5×1015 cm-2. The piezoresistance material of high sensitivity was obtained after laser-recrystallization. Its gauge factor reached to 30, the grain size was increased to more than 10μm×40μm, the concentration profile of impurities became uniform and electrical properties of SOM were improved significantly. The devices made of this material have pressure sensitivity of 6mv/v bar .
出处
《电子学报》
EI
CAS
CSCD
北大核心
1989年第1期108-111,共4页
Acta Electronica Sinica
