摘要
以CW Ar^+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。其晶粒大小为10×40μm^2,杂质分布均匀,电学性能大大改善.用这种SOM材料已制备成功在1bar压力范围内灵敏度为6mV/V的性能良好的压力传感器。
CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly. The pressure transducer made of this material has a pressure sensitivity of 6 mV/V at the pressure range of 1 bar.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1990年第7期416-419,411,共5页
Chinese Journal of Lasers
关键词
激光
非晶硅
再结晶
SOM
laser recrystsllization, SOM, pressure transducer
