摘要
本文用一维紧束缚模型和格林函数方法研究了金属薄层的厚度对金屑一半导体界面电子态和界面能的影响。文中给出了计算局域电子态密度及界面能的公式,并以Pt-ZnO系统为例,计算了金属处于不同层厚时,界面处的电子态密度及界面能,讨论了薄层厚度对二者的影响。
The effets of metal overlayer thickness on the electronic density of states and interface energy of ametal-semiconductor interfae are studied using the one-dimensional tight-binding approximation and theGreen's function method.The formulas of the loalizcd interface density of states and the interface energyare presented.The interface density of states and the interface energy for didfferent thicknesses of the met-al overlayer are calculated.It is found that the valence band of semiconductor is sensitive to the metaloverlayer thckness,and the interface energy gradually approaches to a stable value with the metal over-layer thickness increasing.
出处
《河南师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期52-57,共6页
Journal of Henan Normal University(Natural Science Edition)
关键词
格林函数
金属
半导体
表面能
Electronic density of states
Green's function
Interface energy
