摘要
利用直流反应磁控溅射方法在金属 Al过渡层上沉积了 Si基 Zn O晶体薄膜 ,并利用 X射线衍射、扫描电子显微镜和扩展电阻测试仪对 Zn O薄膜的晶体质量和电学性能进行了分析 .结果表明 ,Zn O薄膜具有高度的 c轴取向 ,样品表明光洁、平整 ,薄膜与衬底之间有清晰的过渡区 .在此 Zn O薄膜上成功地制备了肖特基二极管的原型器件 ,室温下的 I- V测试结果表明该 Au/ Zn O/
ZnO crystal film is synthesized successfully on Al transitional film supported by Si substrate by DC reactive magnetron sputtering.X-ray diffraction,scanning electron microscope,and spreading resistance profile are used to investigate the crystal quality and the electric performance of ZnO thin film.Result indicates that ZnO thin film is well c-axis oriented and the surface of ZnO is very clean and smooth.There is a clear transitional region between ZnO and Al film.Prototype Schottky barrier diode is fabricated using the ZnO thin film.I-V measurement at RT shows that Au/ZnO/Al SBD has an obvious rectifying performance,which has not been reported.
基金
国家自然科学基金 (批准号 :90 2 0 10 3 8)
国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 683 )
教育部博士点基金资助项目~~
关键词
ZNO薄膜
磁控溅射
肖特基势垒
I—V特性
ZnO thin films
reactive magnetron sputtering
Schottky barrier
I-V characteristics
