摘要
以Si(111)为衬底,采用射频磁控溅射与高温退火工艺制备ZnO薄膜.利用X射线衍射、扫描电子显微镜对ZnO薄膜进行表征及结构分析.结果表明,ZnO薄膜具有高度的C轴择优取向,样品表面光洁、平整.在此ZnO薄膜工艺条件下,在石英玻璃衬底上成功制备了Al/ZnO/Ag肖特基二极管紫外探测器.对该紫外探测器的暗电流和365 nm波长光照下的光电流进行了测试.室温下结果表明:Ag和ZnO已形成肖特基接触,根据I-V、C-V测试得到的有效势垒高度分别为0.60 eV和0.53 eV,理想因子为12.6,理论计算得到的空间电荷密度为3.1×1016cm-3.无光照3V偏压时,暗电流为24.19 mA,当用λ=365 nm的光照射Ag/ZnO肖特基结,在3 V偏压时,光生电流为3.28 mA,表明Al/ZnO/Ag紫外探测器有明显的光响应特性.
ZnO thin film is prepared by RF magnetron sputtering and high temperature annealing process on the substrate of Si（111）.X-ray diffraction and scanning electron microscopy were used to analys the characteristic and structure of ZnO thin film.The result shows that ZnO thin film is C-axis oriented and the surface of sample is clean and smooth.It is successfully prepared Al/ZnO/Ag Schottky diode on the quartz substrate.The I-V characteristics of the device is tested in dark and 365 nm wavelength light at room temperature.The results show that schottky contact is formed between Ag and ZnO,the effective barrier height are 0.60 eV and 0.53 eV based on the I-V and C-V measurements.Through theoretical calculation,the ideal factor is 12.6,and the space charge density is 3.1×1016cm-3.At a bias of 3 V,dark current is 24.19 mA,under illumination using monochromatic light with a wavelength of 365 nm,the photogenerated current is 3.28 mA,suggesting that the photodetector has a significantly light response.
出处
《哈尔滨理工大学学报》
CAS
2012年第6期57-60,共4页
Journal of Harbin University of Science and Technology
基金
黑龙江省教育厅科学技术研究项目(12511120)
关键词
紫外探测
肖特基二极管
ZNO薄膜
I-V特性
photodetector
Schottky barrier diode
ZnO thin film
styling
I-V characteristics
