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退火对ZnO薄膜特性的影响与紫外探测器的研制 被引量：4

Effect of Annealing on the Properties of ZnO Films and Fabrication of Ultraviolet Photodetectors
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摘要 利用射频磁控溅射技术在SiO2/n-Si和石英玻璃衬底上制备了具有C轴择优取向的ZnO薄膜,研究了退火对ZnO薄膜特性的影响,并在以SiO2/n-Si为衬底、退火温度为900℃的薄膜上制作了Ag-ZnO-Ag肖特基型和Au-ZnO-Au光电导型MSM叉指结构的紫外探测器。所制作的两种MSM紫外探测器在350 nm波长紫外光照下电流增加,在紫外波段有较高的响应度,光响应度峰值在370 nm附近。 The ZnO fihns were deposited on SiOJn-Si and glass by RF magnetron sputtering. The films have a preferential c-axis orientation. The effect of annealing on the properties of ZnO films was investigated. Ag-ZnO-Ag schottky and Au-ZnO-Au photoconductive ultraviolet （UV）photodetectors were fabricated on the annealed films deposited on SiOJn-Si, and had a metal-semiconductor-metal （MSM）structure with interdigital configuration. The current of the MSM photodetectors increases under 350 nm illuminated of the ultra violet light. The photoresponsivity of the photodetectors is high in the ultraviolet range and it has a maximum value at about 370 nm.
作者 吴跃波 杨启耀 雷声 吴孙桃
机构地区 安徽建筑工业学院机械与电气工程学院 厦门大学萨本栋微机电研究中心
出处 《传感技术学报》 CAS CSCD 北大核心 2012年第5期585-588,共4页 Chinese Journal of Sensors and Actuators
基金 安徽省高等学校省级优秀青年人才基金项目(2010SQRL094) 安徽建筑工业学院硕博科研启动项目(2009-09-04)
关键词 ZNO薄膜 磁控溅射 肖特基 光电导 紫外探测器 ZnO film magnetron sputtering schottky photoconductive UV photodetector
分类号 TN364.2 [电子电信—物理电子学]
  • 相关文献

参考文献18

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二级参考文献25

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共引文献39

同被引文献15

引证文献4

二级引证文献8

传感技术学报
2012年 第5期

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