摘要
ZnO薄膜是以Si作为基底,利用射频磁控溅射和高温度退火技术制备而成的。分析ZnO薄膜结构特征时,使用X射线衍射显示ZnO薄膜具有高度的C轴择优取向;用电子显微镜扫描样品,表面光洁、平整。在制备ZnO薄膜工艺条件下,在石英玻璃基底上制备Al/ZnO/Ag肖特基二极管紫外探测器。对该器件进行电流测试显示:在室温下,Ag与ZnO已经形成肖特基接触,Al/ZnO/Ag肖特基二极管探测器具有明显的光电响应特性。
ZnO thin film is prepared by RF magnetron sputtering and high temperature annealing process on the substate of Si.By analying the structure characteristics of ZnO thin film,the result shows that ZnO thin film is C-axis oriented using X-ray diffraction and the surface of sample is clean and smooth using scanning electron microscopy.It is prepared Al/ZnO/Ag Schottky diode under the conditions of the technology in prepareing ZnO thin film.The device is tested at room temperature.The result shows that schottky contact is formed between Ag and ZnO,Al/ZnO/Ag schottky diode has a significantly light respon.
出处
《信息技术与信息化》
2013年第3期55-58,共4页
Information Technology and Informatization
关键词
AL
ZNO
Ag肖特基二极管
制备
光电特性
Al/ZnO/Ag schottky barrier diode Preparation Electro-optical properties
