摘要
运用 X射线光电子能谱 (XPS)和俄歇电子能谱 (AES)等表面分析手段对表面状态不同的 p- Ga N样品进行了分析 .在样品表面制作了 Ni/ Au电极并进行了 I- V特性测试 .实验结果表明样品表面镓氮元素化学比 (Ga/ N)的减小以及 C,O杂质含量的减少可以改善电极的欧姆接触性能 .
The surface condition of p-type gallium nitride (p-GaN) is investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).Current voltage measurement is utilized to show the I-V characteristics of Ni/Au contacts on the p-GaN.It is shown that removing oxide and carbon impurity and decreasing the atomic ratio of gallium over nitride (Ga/N) on the p-GaN surface results in improving the Ohmic contacts.
基金
国家重点基础研究发展规划 (No.G2 0 0 0 0 3 660 1)
国家高技术研究发展计划 (No.2 0 0 1AA3 12 190
2 0 0 2 AA3 1119Z)
国家自然科学基金 (批准号 :60 2 44 0 0 1)资助项目~~
