摘要
利用射频磁控溅射法在Si衬底上先溅射ZnO缓冲层,接着溅射Ga2O3薄膜,然后ZnO/Ga2O3膜在管式炉中常压下通氨气进行氮化,反应自组生成GaN薄膜。XRD测量结果表明,利用该方法制备的GaN薄膜是沿c轴方向择优生长的六角纤锌矿多晶结构的薄膜,利用SEM观测了其表面形貌,PL测量结果发现了位于351nm处的室温光致发光峰。
ZnO buffer layers and Ga2O3 films were sputtered on silicon substrates using radio frequency sputtering system. Then ZnO/Ga2O3 films were nitrided in tube furnace under flowing NH3 ambience to reactively fabricate GaN films. The meaurement results of X-ray diffraction(XRD)revealed that the as-prepared GaN films were grown in c axis orientation with hexagonal wurtzite structure. The surface morphology of the GaN films were studied by scanning electron microscopy(SEM). And the mearement result of room-temperature photoluminescence spectra found the PL peak locates at 351 nm.
出处
《微纳电子技术》
CAS
2004年第6期26-29,共4页
Micronanoelectronic Technology
基金
国家自然科学基金(90301002
90201025)资助
