摘要
如何测量、计算得到精确接触电阻值已凸显重要。介绍了多种测量计算金属-半导体欧姆接触电阻率的模型和方法,如矩形传输线模型、圆点传输线模型、多圆环传输线模型等,对各方法的利弊进行了讨论,并结合最新的研究进展进行了评述和归纳。综合多种因素考虑,认为圆点传输线模型是一种较好的测量金属半导体接触电阻率的方法。
How to precisely measure and calculate the contact resistance values becomes an important research project. Various models and methods for the measurement and calculation of special contact resistance in metal-semiconductor contacts were summarized. Both the advantages and disadvantages of the models and methods were discussed, including linear transfer length method, circular transmission line model, multiple annular electrode, etc. Combined with the latest research progress, the operate methods were commented and concluded. Comprehensive balance of various factors, a circular transmission line model （CTLM） was recommended as an ideal method for the measurement of special contact resistance in metal-semiconductor contacts.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第2期155-159,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(10675094
10205010
10435060)
关键词
金属-半导体接触
接触电阻率
传输线模型
metal-semiconductor contact
specific contact resistance
transmission line model
