摘要
采用射频 (RF)磁控反应溅射法制备出氮化硅薄膜 .从红外吸收光谱可见 ,氮气参加了反应并生成 Si- N键 ,薄膜中含有少量的 Si- O键和 Si- H键 ;薄膜的成分与制备过程中基片温度、射频功率等工艺参数密切相关 ,当基片温度升高到 40 0℃时 ,薄膜中基本不再含 Si- H键 ,氮化硅薄膜的纯度得到提高 .
Silicon Nitride thin film was prepared by RF magnetron reaction sputtering.We found that the thin film's composition was intensively relative to the temperature of substrate,RF power and other facters.When the temperature was elevated to 400°C,there was litter Si-H bond in the film.Therefore we can prepare high-purified Silicon Nitride thin film by elevating the temperature of substrate during deposition.
出处
《汕头大学学报（自然科学版）》
2003年第2期35-39,共5页
Journal of Shantou University：Natural Science Edition
