摘要
氮化硅在红外热电堆中既充当钝化隔离层又充当红外吸收层,其薄膜刻蚀在MEMS工艺中至关重要。采用RIE-10NR反应离子刻蚀机以SF6为主要刻蚀气体,通过改变氧气流量、射频功率、腔室压强对氮化硅薄膜进行刻蚀实验。通过台阶仪及共聚焦显微镜表征刻蚀形貌、速率及刻蚀均匀性。实验表明,在SF_(6)流量为50 sccm,O_(2)流量为10 sccm,腔室压强为11 Pa,射频功率为250 W的条件下,氮化硅刻蚀速率达到509 nm/min,非均匀性可达2.4%;在同样条件下,多晶硅的刻蚀速率达到94.5 nm/min,选择比为5.39∶1。
Si_(3)N_(4) acts as both passivation isolation layer and infrared absorber layer in infrared thermopiles,and its thin film etching is crucial in the MEMS process.The RIE-10 NR reactive ion etcher was used to etch the silicon nitride film by varying the oxygen flow rate,RF power,and chamber pressure using SF6 as the main etching gas.The etching rate and etching uniformity were characterized by step meter and confocal microscope.The experiments showed that the etching rate of silicon nitride reached 509 nm/min with a non-uniformity of 2.4%under the conditions of 50 sccm SF_(6) flow rate,10 sccm O_(2) flow rate,11 Pa chamber pressure and 250 W RF power,and the etching rate of polysilicon reached 94.5 nm/min with a selection ratio of 5.39∶1 under the same conditions.
作者
关一浩
雷程
梁庭
白悦杭
齐蕾
武学占
Guan Yihao;Lei Cheng;Liang Ting;Bai Yuehang;Qi Lei;Wu Xuezhan(Key Laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education,North University of China,Taiyuan 030051,China;North Automatic Control Technology Institute,Taiyuan 030006,China)
出处
《电子测量技术》
北大核心
2021年第7期107-112,共6页
Electronic Measurement Technology
基金
山西省自然科学基金项目(201801D221203)
山西省重点研发计划项目(201903D121123)
高等学校科技创新项目(1810600108MZ)资助
关键词
氮化硅
多晶硅
反应离子刻蚀
刻蚀速率
非均匀性
silicon nitride
polysilicon
reactive ion etching
etching rate
heterogeneity
