摘要
简要地介绍了氢离子敏场效应晶体管(H^+-ISFET)的基本结构和工作原理,提出了一种新型背面接触式H^+-ISFET。对该结构在版图、工艺设计中的有关问题,进行了探讨。最后指出:它在pH值的测量中有较好的实用价值。
The basic structure and working principle of H+ Ion Sensitive fieldeffect transistors(H+-ISFET)are briefly introduced,A new H+-ISFET with backside contacts has been developed.Some approaches to the layout design and technological design of the structure have been made,Finally, It is pointed out that the davice can ba applied to the measurement of pH values.
出处
《传感器技术》
CSCD
1992年第4期12-15,共4页
Journal of Transducer Technology
