摘要
背面接触太阳电池越来越多地被人们关注,这种电池增加了使用激光器在硅片上打孔工艺。选用了半导体激光器作为光源在晶体硅片上进行打孔实验。通过调节激光器的功率、离焦量、脉冲重复频率等参数并分析其对打孔的影响。在激光打孔后,对硅片使用显微镜测试来分析打孔大小、形貌和损伤区,并优化打孔的参数。通过实验证实孔的入孔直径和出孔直径都随激光能量的增大而增大。随着离焦量的增大,出孔直径先增大后减小,且出孔直径越大时孔附近的破坏区域越小。脉冲重复频率的变化由于影响激光能量而影响孔径。另外,脉冲重复频率过大时,激光能量仍然比较大,但却打不穿硅片。
More attention has been paid to back contact solar cells,in which laser drilling was added.A semiconductor laser was chosen to drill on the crystal silicon wafer.Its power,position of the focus and repetition frequency of the drilling laser were adjusted and the influence on the drilling were analyzed.After drilling,the optical microscope and scanning electron microscope were used to analyze the size,shape and damage area of the hole to optimize the parameters of drilling.The experiments results show that the diameter of the entrance and exit increase with the increasing laser energy.The diameter of the exit increases first,and then decreases with the increasing position of the focus,when the diameter of the exit is bigger,the damage area of the hole is smaller.Since the repetition frequency of the laser affects the laser energy,it will affect the diameter of the holes.Moreover,when the repetition frequency of the laser is too big,though the laser energy is relatively big,the laser cannot drill through.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第5期375-380,389,共7页
Semiconductor Technology
关键词
激光打孔
脉冲能量
离焦量
重复频率
太阳电池
laser drilling
pulse energy
defocusing amount
repetition frequency
solar cell
