摘要
ZnO是一种新型的Ⅱ～Ⅵ族半导体材料。文章详细介绍了ZnO薄膜在其晶格特性、光学、电学和压电性能等方面的研究 ,特别是ZnO薄膜的紫外受激辐射特性 ,另外 ,对ZnO的p型掺杂和 p n结特性的最新进展也作了探讨。
ZnO is a novel material for Ⅱ～Ⅵ semiconductor.In this work, the micro structural, optical, electrical and piezoelectical properties of zinc oxide thin films, especially the property of ultraviolet stimulated emission, were studied in detail. The characteristics of the p type ZnO and p n junctions were also discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2002年第6期581-583,587,共4页
Journal of Functional Materials
基金
国家重大基础研究项目基金资助项目 (G2 0 0 0 0 683 0 6)
关键词
ZNO薄膜
研究进展
晶格特性
光电性能
P型掺杂
zinc oxide thin films
microstructure
optical and electrical property
p type ZnO
