摘要
采用甚高频等离子体增强化学气相沉积技术,制备了一系列从非晶到微晶相变区硅锗合金薄膜,研究了锗烷浓度对相变区及相变边缘硅锗薄膜微观结构和光电特性的影响.结果表明,锗烷的加入抑制了晶态硅的生长,使硅锗合金薄膜发生从晶态到非晶结构的转变.相变区硅锗薄膜为富硅合金薄膜,表现为纳米硅晶粒镶嵌于非晶硅锗网络的微观结构.随着锗烷浓度增加,合金薄膜光学带隙Eopt逐渐减小,表征薄膜结构有序性的结构因子F,呈先减小后增加趋势.当锗烷浓度为9%时,硅锗合金薄膜处在非晶/微晶相变边缘,薄膜具有较高的致密性,光敏性接近104,适用于叠层薄膜太阳能电池器件吸光层应用.
Several series of silicon-germanium alloy films were prepared by very high frequency plasma enhanced chemical vapor deposition with various germane concentrations. The influence of germane concentration on the microstrueture and optoelectronic properties of silicon-germanium alloy films at transition and transition edge regime was studied. It was found that Ge suppressed the growth of crystalline silicon and the transition from microcrystalline to amorphous took place with the increase of germane concentration. The silicon-germanium alloy films at transition regime were rich silicon al- loys, of which the microstruetures were nanoerystalline silicon embedded in the amorphous silicon-germanium alloy ma- trix. The optical gap Eo~ decreased, but structure faetor F, as a means of quantifying the amount of microstrueture, lessened at first, then went up with increasing of germane concentration. The silicon-germanium alloy film on the transition edge was most compact, of which the photosensitivity approached 104, which was suitable for the intrinsic layer of tandem solar cell when germane eoncentration was 9%.
作者
范闪闪
路雪
牛纪伟
于威
傅广生
FAN Shanshan LU Xue NIU Jiwei YU Wei FU Guangsheng(School of Electronic and Information Engineering, Hebei University of Technology, Tianjin, 300401, China School of Science, Hebei University of Technology, Tianjin 300401, China College of Physics and Technology, Hebei University, Hebei Baoding 071002, China)
出处
《河北工业大学学报》
CAS
2017年第3期83-87,共5页
Journal of Hebei University of Technology
基金
河北省重点基础研究项目(12963930D)
关键词
等离子体增强化学气相沉积
硅锗合金薄膜
相变区及相变边缘
锗烷浓度
光敏性
plasma enhanced chemical vapor deposition
silicon-germanium alloy films
transition and transition edge regime
germane concentration
photosensitivity
