摘要
采用等离子增强化学气相沉积方法(PECVD)制备了微量掺碳的p型纳米非晶硅碳薄膜(p-nc-SiC:H),反应气体为硅烷和甲烷,掺杂气体采用硼烷,沉积温度分别采用333K,353K和373K.测量结果表明随着沉积温度增加和碳含量的增加,薄膜的光学带隙增加;薄膜具有较宽的带隙和较高的电导率,同时有较低的激活能(0.06eV).Raman和XRD测量结果表明薄膜存在纳米晶.优化的p型纳米非晶硅碳薄膜作为非晶硅p-i-n太阳电池的窗口层,使得太阳电池的开路电压达到0.94V.
This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC ： H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC：H/a-Si：H solar cells have been successfully prepared with a Voc of 0.94 eV.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第5期2915-2919,共5页
Acta Physica Sinica
基金
北京市自然科学基金(批准号:04D063)资助的课题~~
关键词
光学带隙
纳米硅
薄膜
太阳能电池
Infrared absorption spectra, optical band gap, nanocrystalline silicon films, solar cells
