摘要
采用计算机控制电流密度按指数规律衰减对单晶硅进行电化学腐蚀,得到了折射率随薄膜厚度连续均匀变化的抗反射膜,即黑硅样品.这种在制取上快速、经济和工艺非常简单的样品,不仅在较宽波段范围内反射率小于5%,且整个薄膜厚度不足1μm.利用传输矩阵方法对黑硅样品的反射谱进行模拟,得到了理论与实验符合较好的结果.
Solar cells and optical detection devices are often covered with antireflective surfaces to enhance their performance. An economical, fast, and easily operational electrochemical etching technique has been developed to realize a continuous uniform variation in the refractive index of porous silicon layer as a function of the etching depth. By using this technique a black silicon sample was fabricated, which has a reflectance below 5 % over a broad band and a thickness below 1μm. The depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated results give a good agreement with the experimental measurements.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第1期514-518,共5页
Acta Physica Sinica
基金
教育部科学技术研究重点项目(批准号:105145)
教育部新世纪优秀人才支持计划(批准号:NCET-05-0772)
西南大学科技基金(批准号:SWNUB2005030)资助的课题~~
关键词
多孑L硅
折射率
抗反射膜
黑硅
porous silicon, refractive index, antireflection coating, black silicon
