摘要
实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段.采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术,实现了微晶硅硅薄膜的高速沉积,并通过改变气体总流量改变气体滞留时间,考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响.采用沉积速率达到12/s的高速微晶硅工艺制备微晶硅电池,电池效率达到了5.3%.
To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of μc-Si ： H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） in this paper. The influence of gas residence time on deposition rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12 A/s reached 5.3%.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第5期2790-2795,共6页
Acta Physica Sinica
基金
国家重点基础研究发展计划(973)项目(批准号:2006CB202602
2006CB202603)资助的课题~~
关键词
气体滞留时间
高速沉积
微晶硅
超高频等离子体增强化学气相沉积
gas residence time, high deposition rate, microcrystalline silicon, very-high-frequency plasma-enhanced chemical vapor deposition
