摘要
采用PECVD技术,在玻璃衬底上沉积μc-Si:H薄膜.用拉曼光谱、SEM和UV分光光度计对不同沉积温度下沉积的薄膜的结构特性进行分析.研究发现:沉积温度较低时,随着沉积温度的升高,薄膜的晶化率增加;当沉积温度超过某一温度值时,随着温度的进一步升高,薄膜的晶化率降低.这时,表面反应由表面扩散限制转变为流量控制.该温度值随着硅烷含量的降低而降低.
Undoped hydrogenated silicon films have been prepared from a gas mixture of silane and hydrogen, at deposition temperature varying from 200--450℃ in an ultrahigh vacuum system using RFPECVD technique. Raman scattering, SEM and UV spectrophotometer are used to analyse the structure changes of microcrystalline silicon films throughout the deposition temperature range. Results show that at lower deposition temperature, the crystalline volume fraction of μc-Si：H films increased with the increasing of deposition temperature. Exceeding a certain temperature, the crystalline volume fraction decreased with further increasing of deposition temperature. This is attributed to a change in the dominant film growth process from surface- diffusion-limited at low deposition temperatures to flux-limited at higher deposition temperatures.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第7期4122-4126,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2006CB202601)资助的课题.~~
关键词
氢化微晶硅薄膜
拉曼散射谱
晶化率
UV分光光度计
microcrystalline silicon film, Raman scattering, crystalline volume fraction, UV spectrophotometer
