摘要
(东南大学,南京 210008) 重点介绍Ⅱ-Ⅵ族化合物半导体薄膜的特性,特别是CdS和CdSe。利用密封空间汽化传输技术制作的CdS薄膜具有低的电阻(300K时,σ为0.88～1.34Ω^(-1)·cm^(-1))、高的载流子迁移率。X射线衍射仪分析表明:在(002)面择优生长,薄膜特性与制膜工艺有明显的关系,淀积后的退火和就地腐蚀能增大晶粒尺寸,减少晶粒边界。同时介绍了CdSe太阳电池的特性。
This paper reports properties of Ⅱ-Ⅵ compound semiconductor films , in particular CdS and CdSe. Thin CdS films with low resistive (in the range of 0. 088～1.34Ω^(-1)·cm^(-1), at 300K) and high mobility have been grown using sealed space vapour transport technigues. X ray diffraction analysis shows that the films are grown preferentially in the (002) plane. The strong influence of growth tech- niques on behaviour of the films are also studied. The effect of post deposition an- nealing and in site etching on the reduction in the grain boundary and the increase of grain size is observed. This paper also reports characteristics of CdSe semiconduc- tor films -liguid junctions of solar cells.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期305-310,336,共7页
Semiconductor Optoelectronics
关键词
太阳电池
化合物半导体
薄膜
晶体
Ⅱ--Ⅵ Compound Semiconductor
Solar Cell
Thin Film
Heterojunction
Crystal Growth
