摘要
本文利用偏心静电单探针诊断了反应室内的等离子体密度的空间分布；由Ｔｅｌｙｓｔｅｐ－Ｈｏｂｂｓｏ轮廓仪研究了 ＥＣＲ－ＰＥＣＶＤ制备的 Ｓｉ３Ｎ４薄膜的表面特性．结果表明 ＥＣＲ－ＰＥＣＶＤ制备的氮化硅薄膜是一种表面均匀平整度好的薄膜．
The spatial distribution of the ECR plasma density in the reaction chamber has been measured by using a eccentric langmuir probe. The surface roughness characteristic of Si3N4 thin film has been researched with the profilometer Tlystep- Hobbson. The results show the surface of this kind of thin film made by ECRPECVD technology is very smooth.
出处
《量子电子学报》
CAS
CSCD
2000年第4期365-368,共4页
Chinese Journal of Quantum Electronics
关键词
表面平整度
氮化硅薄膜
等离子体
ECR-PECVD, Si3N4 thin film, the surface roughness
