摘要
在衬底温度400℃条件下对n型(100)单晶硅进行剂量分别为5×1017cm-1和1×1018cm-1的C+注入,经过在1050℃氮气氛下进行60min退火形成β-SiC埋层。通过X射线光电子能谱(XPS),俄歇电子能谱(AES)及付立叶变换红外吸收光谱(FTIR),对所形成的碳化硅埋层进行了测试与分析。结果表明在此条件下,在Si中可以形成一定的SiC埋层,并且C+离子注入硅衬底可以形成β-SiC和α-SiC。SiC埋层主要由非立方相的α-SiC和立方相的β-SiC所构成。
Carbon ions were implanted into Si substrates at an energy of 45keV with dose of 5×1017cm-1 and 1×1018cm-1 at about 400℃. after annealing at 1050℃ for 60min , the precipitates of SiC were formed. The SiC buried layer was studied by X-ray photo-emission spectroscope (XPS), Fourier transform infrared spectroscope (FTIR) and Auger electronic spectroscope (AES). The results show that SiC buried layer is formed in silicon underlayer, which consists of non-cubic α-SiC and cubic β-SiC.
出处
《功能材料与器件学报》
CAS
CSCD
2002年第1期5-7,共3页
Journal of Functional Materials and Devices
基金
辽宁省科委自然科学基金(No.972094)
国家自然科学基金资助项目(No.69876013)
