摘要
报道用脉冲 Ar F激光烧蚀 Si C陶瓷靶 ,在 80 0℃ Si( 1 1 1 )衬底上淀积 Si C薄膜 ,再经92 0℃真空 ( 1 0 - 3Pa)退火处理 ,制备出晶态α- Si C薄膜 .用 FTIR、XPS、SEM、XRD、TEM、PL谱等分析方法 ,研究了薄膜的表面形态、晶体结构、微结构、组成、化学态和光致发光等 .结果表明 ,在 92 0℃较低温度下 ,Si C薄膜经非晶核化 -长大过程 ,生成了晶态α- Si C( 0 0 0 1 )∥ Si( 1 1 1 )高度定向外延膜 ,薄膜内 C/ Si比约为 1 .0 1 .表面有污染 C及少量氧化态 Si和 C.室温下用 2 80 nm光激发薄膜 ,在 341 nm处有较强发光峰 ,半峰宽 45nm,显示出较好的短波发光性质 .
By ablating ceramic SiC target with pulsed ArF laser, SiC films are deposited on the Si(111) substract at temperature 800℃.After the post deposition annealing at the temperature of 920℃ in high vacuum (10 -3 Pa),crystal α SiC films are obtained.The properties of the films before and after annealing such as the surface morphology, crystal structure,composition,chemical state of the element and photoluminescence,etc. are studied by Fouriour Transform Infrared spectrum (FTIR),X\|ray photoelectron spectrum (XPS),scanning electron microscope (SEM),X\|ray diffraction (XRD),transmission electron spectrum (TEM),photoluminescence (PL) methods. From analysis it is obtained that SiC film has grown up to a highly oriented crystal α SiC(0001)∥Si(111) epitaxial film through an amorphous nucleation and growth process at the fairly low temperature of 920℃.Ratio of C and Si is about 1 01 inside the film.There are some contaminated carbon and a small quantity of oxidized Si and C on the surface.Excited by ultraviolet light with the wavelength of 280nm at room temperature,the films give out a fairly strong emission peak at 341nm,whose FWHM is 45nm,as shows rather good shortwave photoluminescence quality.The mechanism of the film lighting emission deserve further investigation.
基金
国家自然科学基金资助项目!项目编号 59772 0 1 6
