摘要
对由量子限域效应引起的硅纳米晶粒的强烈光致发光现象、离子注入技术制备量子光电材料及其在光电子器件应用领域的优势和前景作了评述和探讨．
The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.
出处
《原子核物理评论》
CAS
CSCD
1998年第3期166-169,共4页
Nuclear Physics Review
基金
中国科学院重点项目基金
