摘要
将C+离子注入硅衬底,衬底温度约为400℃,C+离子引出电压为45keV注入剂量为5×1017cm-2.经高温退火形成碳化硅沉淀,利用X射线光电子能谱(XPS),俄歇电子能谱(AES)及傅立叶变换红外吸收光谱(FTIR),对所形成的碳化硅埋层作了初步的分析.
Carbon ions were implanted into Si substrates at an energy of 45 keV with a dose of 5×10 17 cm -2 at about 400℃ after high temperature annealing. The precipitates of β-SiC were formed. The β-SiC buried layer is studied by x ray photo emission spectroscopy (XPS)、 Fourier transform infrared spectroscope(FTIR) and Auger electronic spectroscope (AES).
出处
《辽宁大学学报（自然科学版）》
CAS
2000年第1期46-48,共3页
Journal of Liaoning University：Natural Sciences Edition
基金
辽宁省科委自然科学基金
辽宁省教委自然基金
