摘要
硅发光对于在单一硅片上实现光电集成是至关重要的．本文介绍了目前已有的使硅发光的方法：掺深能级杂质，掺稀土离子，多孔硅，纳米硅以及Ｓｉ／ＳｉＯ２超晶格，讨论了两种可能的发光机制：量子限制效应和表面复合效应．最后介绍了两个硅发光器件。
Abstract Silicon luminescence is most important for opto electronic devices integrated on a single silicon substrate. This paper introduces some recent methods making silicon luminescent: doping of deep level impurities, doping of rare earth ions, porous silicon, nanocrystalline silicon, and Si/SiO 2 superlattice. Two possible luminescence mechanisms are discussed: quantum confinement effect and surface combination effect. Finally we introduce two silicon luminescence devices, showing that their prospect is bright.
