摘要
利用金属蒸气真空弧 (MEVVA)离子源将稀土金属Er离子注入单晶硅中 ,经快速退火制备出掺铒硅发光薄膜。RBS分析表明掺铒硅的浓度接近 10at% ,即可达 10 2 1cm- 3量级。XRD分析薄膜物相结构发现 ,退火温度升高将导致Er偏析。通过RHEED和AFM显微分析可得 ,退火温度影响辐照损伤的恢复程度、Si固相外延再结晶和显微形貌。这些结构变化将影响掺铒硅发光薄膜1.5 4μm光致发光。
Er ions were implanted into Si substrates using metal vapor vacuum arc (MEVVA) ion source implanter, and Er-doped Si thin films have been formed after rapid thermal annealing (RTA). It was analyzed by Rutherford back-scattering spectroscopy (RBS) that Er concentrations in the thin films were close to 10at% corresponding to the level of ～10 21 atoms/cm 3 and Er segregation in the surface layer of the thin films appeared with increasing the temperature of RTA. The recovery of irradiation damage, Er segregation and Si solid phase epitaxy of Si amorphous layers were closely dependent on annealing temperature, which would influence on photoluminescence around 1.54μm from Er-doped Si thin film.
出处
《核技术》
CAS
CSCD
北大核心
2002年第8期631-636,共6页
Nuclear Techniques
基金
国家自然科学基金 (6 976 6 0 0 1)
复旦大学应用表面物理国家重点实验室资助
