摘要
针对一款商用浮栅型Flash存储器进行60Coγ总剂量试验和退火试验,分析了器件失效的机理。使用超大规模集成电路测试系统测试了Flash的DC、AC、功能参数,利用Shmoo测试扩展了辐射敏感参数的范围和辐射损伤分析手段,分析了辐射敏感参数在辐射和退火过程中的变化规律。实验结果表明:强场下氧化物陷阱电荷和界面态陷阱电荷的加速积累使电荷泵电路的性能恶化造成器件的功能失效。由于氧化物陷阱电荷在数量上多于界面态陷阱电荷,使得器件功能和辐射敏感参数在退火过程中恢复。
Background： Studies of the radiation effects on the floating-gate flash memory have been mainly focused on functionality measurement. Purpose： According to the present situation, flash memory was irradiated and annealed by ^60Coγ rays, and the TID failure mechanism of the device was analyzed. Methods： The function parameters including DC and AC were measured using a large scale integrated circuit testing system. The range of radiation-sensitive parameters was extended using the Verigy 93000 instrument and the shmoo test. Results： The results showed that the maximum operating frequency was radiation-sensitive parameter which has a significant change in radiation and annealing. Conclusions： Under strong electric field, due to the accumulation of oxide trapped charge and interface trap charge, the performance of charge pump circuit was deteriorated and the function of device was failed. Annealing characteristics indicated that the oxide trapped charge accounts for a major role.
出处
《核技术》
CAS
CSCD
北大核心
2013年第8期20-24,共5页
Nuclear Techniques
