摘要
介绍了不同版图结构制作的 CMOS运放电路的电离辐照实验结果 ,分析比较了在常规版图及采用了保护环措施后制作的运放电路辐照响应之间的差异。结果显示 ,常规版图制作的运放电路 ,由于存在不易消除的场氧漏电 ,其电路的辐射敏感性会明显增大。而加入保护环后 ,能明显消除这一不利影响 ,从而使电路的抗辐照特性得到改善。
The total dose radiation responses of the CMOS amplifiers with varied structure patterns were presented. By compared the radiation effects of the amplifiers having normal structure pattern with that having protecting circles, it was concluded that the former have more radiation sensitivity because of the existence of the leaked current from the field oxide whereas the radiation responses in later case are reduced by applying a protecting circles in the around of their gates. Our results will be great helpful to improve the radiation hardening of the CMOS amplifiers.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第2期182-185,共4页
Research & Progress of SSE
关键词
CMOS运算放大器
场氧漏电
氧化物电荷
界面态
CMOS amplifiers
leaked current of field oxide
oxide charges
interface states
