摘要
对应用在不同辐射环境下HP4156半导体参数自动化在线测试系统以及脉冲总剂量效应在线测 试系统进行了详细的介绍,说明其工作原理和技术指标,并利用这两套测试系统对典型CMOS器件 4007在强光一号加速器脉冲硬X射线状态、长脉冲γ射线状态以及60Co稳态γ射线状态下开展了不同 辐射环境总剂量损伤效应的比较研究,为今后深入进行此项工作打下了基础．
The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰ accelerator, and by 60^Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.
出处
《高能物理与核物理》
EI
CSCD
北大核心
2006年第1期79-83,共5页
High Energy Physics and Nuclear Physics
基金
国防预研基金(3110702)资助~~
