摘要
对3种MOS器件在不同模拟源的两种辐照剂量率下进行辐照实验,研究了MOSFET阈值电压随辐射剂量及剂量率的变化关系。对实验结果进行了分析讨论。试验表明:在相同辐射剂量下,低剂量率辐照损伤比高剂量率大。
Three MOS devices are tested under two different dose rates of different simulation radiant point. The sensitive parameters related to the total-dose and the dose rate about the threshold voltage of MOSFET are studied in detail. The experiment results are analysed and discussed. Experimentation indicates:under the same radiation dose, ionizing radiation damage at low dose rate is more than that at high dose rate.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2005年第3期322-325,共4页
Nuclear Electronics & Detection Technology
