摘要
通过对Ｓｉ（１００）衬底上Ｃ６０薄膜在不同温度处理后的ＡＥＳ谱线研究发现，Ｃ６０分子于９７３Ｋ时开始分解，生成石墨类碳碎片，１０７３Ｋ时Ｃ原子已与Ｓｉ原子键合形成ＳｉＣ，１１２３Ｋ时Ｃ６０分子全部分解，这一研究结果对解释Ｃ６０分子促进金刚石成核将起到重要作用．
A series of AE spectra for 'as-deposited' C60 films on Si(100) substrate annealed at different temperatures were studied. C60 molecules begin to decompose at 973K and result in a graphite-like carbon fragmentation. When C60 film is heated to 1073K, silicon and carbon will bond to form silicon carbide.At 1123K all C60 molecules will decompose. The results may take place an important role for the explanation of C60 molecule promoting diamond nucleation.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第5期957-960,共4页
Journal of Inorganic Materials
基金
国家自然科学基金!(59682005)
关键词
碳60薄膜
热处理
性能
C60 film
AES
graphite-like carbon fragmentation
SiC
