摘要
采用直流热阴极PCVD技术,在CH4-H2气氛常规制备微米晶金刚石膜的参数条件下,通过人工干预实现二次形核,制备纳米晶金刚石膜。金刚石膜周期性生长过程分为沉积阶段和干预阶段,沉积阶段时间为20 min,干预阶段将沉积温度降低到600℃,时间为1 min,然后恢复到生长温度,一个生长周期为21 min,总的沉积时间为6 h。实验分为高、低气压和高、低温度的四种组合,并与连续生长模式进行了对比。采用拉曼光谱仪、SEM对样品进行了分析,除高气压和高温度条件外,其它三组实验的金刚石膜的1332 cm-1拉曼峰展宽明显、金刚石膜晶粒小于100 nm,样品都具有纳米晶特征。结果表明直流热阴极PCVD技术的人工干预方法,可以导致金刚石膜生长过程的二次形核行为发生,制备出纳米金刚石膜。
Using DC hot-cathode plasma chemical vapor deposition （PCVD）, nanocrystalline diamond films were prepared with parameters as the same general as preparation of mierocrystalline diamond films in the CH4-H2 atmosphere by manual intervetion induced second nucleation. There are two phases （growth phase and intervetion phase） in a periodical growth process of diamond film. Time of deposition phase was 20rain and during the intervetion phase the deposition temperature decreased to 600~C for lmin then return to growth temperature. The total growth time is 6h. The experiments were carried out through four eombimations of high and low pressures and temperatures, and the samples were characterized by Raman spectroscopy and SEM, and compared with another samples deposited in continuous growth mode. Except the condition of high temperature and high pressure, the diamond films prepared under other conditions are all nanocrystalline. The results revealed that induced by manual intervetion, the action of second nucleation is formed, and nanoerystalline diamond films could be prepared by DC hotZcathode PCVD.
出处
《真空》
CAS
2013年第3期79-83,共5页
Vacuum
基金
黑龙江省教育厅2009科学技术研究面上项目(项目编号:11541377)
牡丹江市科技攻关项目(项目编号:G2009g1023)
关键词
人工干预二次形核
纳米金刚石膜
直流热阴极PCVD
second nucleation
manual intervetion
nanocrystalline diamond .film
DC hot-cathode PCVD
