摘要
采用直流热阴极等离子体化学气相沉积(PCVD)技术,在CH4:H2中加入N2改变等离子体能量分布状态,提高二次形核比例,制备纳米金刚石膜。在CH4:H2气体中,在不同压力和温度下,改变通入N2的比例,分析直流热阴极等离子体放电下N2对金刚石膜生长的影响。采用拉曼光谱仪、扫描电镜(SEM)和X射线衍射分析仪(XRD)对样品进行了表征,结果表明,直流热阴极PCVD系统中,CH4:N2:H2气氛下,N2流量小于气体总流量的50%时,在6×103 Pa、850℃条件下,制备的金刚石膜样品的晶粒小于100nm、金刚石1332 cm-1特征峰展宽且强度较高、金刚石的XRD衍射峰强度也较高,具备纳米金刚石膜的基本特征。因此,利用直流热阴极PCVD方法,在较低温度和气压下,CH4:H2中加入少量N2,可以制备出纳米金刚石膜。
The nanocrystalline diamond films were prepared by DC hot-cathode PCVD（plasma chemical vapour deposition） process where the nitrogen was added in CH4-H2 gas to form a mixed atmosphere to change the energy distribution of plasma,thus improving the proportion of secondary nucleation for preparing nanocrystalline diamond films.The effect of the nitrogen concentration in CH4-H2 gas on the film growth was investigated under different pressure/temperature during plasma discharge.SEM,Raman spectroscopy and XRD were used to characterize the samples,and the results showed that the grain size of diamond films is smaller than 100nm if prepared by DC hot-cathode PCVD process in CH4：N2：H2 atmosphere under the pressure 6×10^3Pa at 850℃ with the N2 flowrate less than 50% of total gas flowrate.It was observed by Raman spectroscopy that the characteristic absorption peak around 1332cm^-1 is spreading with high intensity,and the intensity of XRD peak is high as well.All of these revealed that the PCVD process proposed is available to diamond nanofilms.
出处
《真空》
CAS
北大核心
2010年第5期35-38,共4页
Vacuum
基金
黑龙江省教育厅2009科学技术研究面上项目(项目编号:11541377)
2008年黑龙江省研究生创新科研项目(YJSCX2008-206HLJ)
