摘要
在传统工业型热丝化学气相沉积(HFCVD)反应腔内,相关工艺参数取模拟计算优化值的条件下,采用XRD,SEM及Ram an光谱等分析手段研究了单晶S i(100)上较大面积金刚石薄膜的动力学生长行为,讨论了晶格取向的变化规律。结果表明:优化工艺参数条件下,在模拟计算的衬底温度和气体温度分布均匀的区域内,沉积的金刚石薄膜虽存在一定的内应力,但整体薄膜连续、均匀,几何晶形良好,质量较高,生长速率达1.8μm/h。薄膜生长过程中晶形显露面受衬底温度和活性生长基团浓度的影响较大。
For the easier scaling up and better growth behavior of diamond films, hot-filament CVD （HFCVD） is considered as the most promising deposition technique compared with the other CVD techniques. However, inhomogeneous nucleation and low growth rate of diamond films are two main barriers to industrial applications for the HFCVD technique. When the relative deposition parameters are fixed at optimized values, the spatial distributions of substrate temperature and gas temperature are calculated by a developed two-dimensional mathematical model based on previous results. In addition, the growth kinetics of diamond films over a large area deposited on silicon （100） is discussed in terms of the simulated results. X-ray diffraction, scanning electron microscopy and Raman spectroscopy were used to characterize the structure and morphology of the films. It is found that under the simulated homogeneous distributions of substrate temperature and gas temperature, the diamond films, although with residual stress, are continuous and uniform with good crystallinity and high quality, the average growth rate is up to 1.8 mm/h. Simultaneously, the dominant morphology of the films is very sensitive to substrate temperature and radical concentrations, which agree well with the earlier simulated results.
出处
《新型炭材料》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期229-234,共6页
New Carbon Materials
基金
辽宁省科委资助项目
国家自然科学基金(59292800)~~
