摘要
建立和发展了非脉冲式的直流热阴极PCVD(PlasmaChemicalVapourDeposition)方法。通过采用温度为110 0℃～ 15 0 0℃的热阴极以及阴极和阳极尺寸不相等配置 ,在大的放电电流和高的气体气压下实现了长时间稳定的辉光放电 ,并用这种方法制备出大尺寸高质量的金刚石厚膜 ,其厚膜直径为 4 0mm～ 5 0mm ,膜厚为～ 4 .2mm ,生长速率最高达到 2 5 μm/h左右 ,在 5 μm/h～ 10 μm/h的生长速率下制出的金刚石厚膜 ,热导率一般在 10W/K·cm～12W /K·cm。高导热金刚石厚膜用做半导体激光二极管列阵的热沉和MCM的散热绝缘基板 。
A hot-cathode DC-PCVD (Plasma Chemical Vapour Deposition) method was established. By using a hot-cathode with a temperature in the range 1100 degreesC similar to 1500 degreesC and an unsymmetrical configuration of a cathode diameter larger than that of the anode, a long time stable glow discharge was achieved at large discharge current and high gas pressure. Large size thick diamond films of high quality were synthesized by this method. The diameter of diamond thick films are D 40 mm similar to D 50 mm, with a maximum thickness of 4.2 mm, with maximum growth rate of 25 mum/h were obtained. Diamond thick films with high thermal conductivity were grown over a range of growth rates of 5 mum/h to 10 mum/h, and the thermal conductivity of most of the films were in the range 10 W/K (.) cm similar to 12 W/K (.) cm. Diamond thick films with high thermal conductivity were used as the heat sink of a semiconducting laser diode array and used as the heat distribution and isolation substrute of multi-chip modules (MCM) with an obvious improvement in performance.
出处
《新型炭材料》
SCIE
EI
CAS
CSCD
2002年第2期9-12,共4页
New Carbon Materials
基金
国家 8 63新材料领域资助项目~~
