摘要
报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .研究了两步阳极化法形成不同多孔度的双层多孔硅层及外延前对多孔硅进行长时间的低温真空预处理等工艺 .对获得的外延层作了 XRD、XTEM和扩展电阻等测量 ,测量结果表明硅外延层单晶性好 ,并和硅衬底、多孔硅层具有相同的晶向 .硅外延层为 P型 ,电阻率大于 1 0 0 Ω·cm.
UHV/CVD Si epitaxial growth on porous silicon has been reported.Double\|layer porous silicon with different porosity has also been studied,which is formed by a two\|step anodization and low\|temperature,long\|time treatment of porous silicon in a vacuum system.The properties of Si epitaxial layer are investigated by XRD,XTEM and spreading resistance techniques.The results show that Si epitaxial growth layer is of good crystallinity and the same orientation with Si substrate and porous silicon layer.The epitaxial Si is P\|type and more than 100Ω·cm.
基金
国家自然科学基金!(编号为 698760 0 7)
硅材料国家重点实验室资助课题&&
