摘要
本文利用自行研制的一台超高真空化学气相沉积（ＵＨＶ／ＣＶＤ）系统，在７８０℃下进行了硅低温外延，取得了表面平整、缺陷密度低、界面质量良好。
Abstract Silicon epitaxial layers were grown at 780℃ in an ultrahigh vacuum/chemical vapor deposition reactor successfully.SEM,TEM and SPR(spreading resistance measurements) were used to characterize the layers.Results show that the layers having smooth surfaced,low fault density and steep transition region were obtained.
基金
国家教委"跨世纪优秀人才"基金
国家自然科学基金
南京大学固体微结构国家重点实验室开放课题资助
