摘要
本文描述超高真空化学气相淀积系统（ＵＨＶ／ＣＶＤ）的设计思想、系统的结构和性能，着重介绍超高真空的获得和系统的特点，将为“第二代硅”ＳｉＧｅ／Ｓｉ异质结材料的生长及未来的光电子集成提供有力的工具。
The design, configuration and performances for a UHV/CVD(ultra high vacuum/chemical vapor deposition) system were presented in this paper. The emphases were focused on the realization of ultra high vacuum of the complex system and its characteristics. The system provides an efficient tool for the growth of 'second generation of Si'-SiGe/Si heterostructures and for Si based optoelectronic integration in the future.
出处
《真空》
CAS
北大核心
1997年第6期14-17,共4页
Vacuum
