摘要
20世纪 90年代初期人们发现的多孔硅的光致发光现象对硅被认为不可能制作可见光区光电器件的传统概念产生了巨大冲击 .国际上掀起了一股多孔硅热 ,国内也已经起步 .结合作者在多孔硅方面的部分工作对多孔硅的形成机理、微观结构、发光机制和应用前景作了较详细的介绍 .
Photoluminescence phenomenon of porous silicon which was found in early 90's induced a giant impact on traditional concept, in which people once thought that silicon couldn't be used to make photo electric device in the visible region. Much attention was paid to the porous silicon research all over the world, and this kind of research began recently in our country. In this paper, forming mechanism, microstructure, luminescencing mechanism and applied prospect was introduced in details.
出处
《辽宁大学学报（自然科学版）》
CAS
2000年第3期249-255,共7页
Journal of Liaoning University：Natural Sciences Edition
关键词
多孔硅
量子线阵
硅氧烯
光致发光
应用
porous silicon,quantum string forne,silicon oxidate alken.
