摘要
减薄膜厚有利于提高 Pt Si红外探测器的量子效率。本文研究了膜厚减薄工艺对薄膜连续性的影响 ,用 XRD观察物相 ,SEM、TEM研究薄膜连续性 ,并给出理论解释。实验表明用混合生长 ( S- K)
Thinner PtSi film can increase the quantum efficiency of PtSi infrared detector.The effects of forming condition on the continuity of PtSi film are studied in this article,The continuity of film is investigated by SEM and TEM,and the phase of PtSi film by XRD.The theoretical explanation is also given.It is declarethat the continuous ultra thin PtSi film can be obtained by Stranski Krastanov model.
出处
《激光与红外》
CAS
CSCD
北大核心
2000年第4期238-239,共2页
Laser & Infrared
