摘要
研究了在（１１１）Ｓｉ衬底上沉积５ｎｍＰｔ膜经不同工艺成形后其反应产物及膜的连续性．结果表明高温短时间退火（６００℃。
Abstract The constitution and continuity of PtSi(111) films formed by evaporating 5nm Platinum film on Si(111) substrates, and then, annealed at different temperatures, are studied.The results show that the technology with a high temperature and short time annealing (600℃、3min) is favorable to form a continuous nanometre-level PtSi film.
