摘要
本文报导了Au-Zn/Au-Sb/GaP体系在520℃～560℃合金化温度下能得到较好的欧姆特性,观察到欧姆接触特性与合金化后界面形成的不规则小岛密切相关;从理论上解释了小而密的小岛能得到较低的比接触电阻的事实。同时,提出了Au-Zn/Au-Sb/GaP体系呈现良好欧姆接触的微结构模型。
The relation between alloying temperature and specific contact resistivity in the Au-Zn/Au-Sb/GaP system has been reported. At alloying temperature of 520℃-560℃. good ohmic contact characteristic has been obtained. By observing the small islands in the interface of the contact system using scanning electronic microscope, energy dispersive spectrum and Auger energy spectrum, we have found that the ohmic characteristic has a close relation with the formation, size and density of the small islands. Analysing theorectically the relation between small islands and the specific contact resistivity, we have explained the facts that small and dense islands can result in a low specific contact resistivity, and we also proposed a mi-crostructure model which shows good ohmic contact behavior of Au-Zn/Au-Sb/GaP system.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1990年第3期90-94,114,共6页
Acta Electronica Sinica
