摘要
以Si(111)衬底 ,用脉冲激光沉积 (PLD)法制得C轴高度择优取向的ZnO薄膜 ,并利用剥离技术制备了ZnO光导型紫外探测器 .Al叉指状电极是由平面磁控溅射技术沉积得到的 .对Al/ZnO/Al的伏安特性和紫外光响应的研究表明 ,金属铝和ZnO能形成很好的欧姆接触 ,紫外探测器的电阻值在 10 0KΩ左右 .在紫外区域 ,其 5V偏压下的光响应度为0 .5A/W .
Highly c-axis oriented ZnO thin films were deposited on single crystal Si(111) substrates by pulsed laser deposition (PLD). The photoconductive UV detectors based on ZnO thin films, being an MSM structure with interdigital (IDT)configuration, were fabricated by the desquamation photoetching method. The Al film-electrodes were deposited by planar magnetron sputtering. Results showed that the alloying temperature should be lower than 600°C. The I-V characteristic and the UV photoresponsivity of the detector were also investigated, indicating a good ohmic behavior between Al and ZnO thin film, a resistance about l00 KΩ for the detector, and a photoresponsivity of 0.5 A/W under ultraviolet illumination in ultraviolet region.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2003年第11期1605-1607,共3页
Acta Electronica Sinica
基金
国家重点基础研究专项经费"973"(No .G2 0 0 0 0 683 0 6)
关键词
ZNO薄膜
光电导紫外探测器
欧姆接触
光响应度
Magnetron sputtering
Ohmic contacts
Photoconducting devices
Thin films
Zinc oxide
