摘要
文章评述各种红外焦平面阵列技术的发展现状 ,其中 ,光量子型红外焦平面阵列包括Ⅱ -Ⅵ族HgCdTe三元化合物阵列、Ⅲ -Ⅴ族InSb二元、InGaAs和GaAiAs三元化合物阵列、PtSi和非本征硅阵列技术 ,热型红外焦平面阵列包括Si、金属Ti、VOx 微测热辐射计、多晶硅热电堆和钡锶钛 (BST)等热释电 -铁电阵列 ,展望了该技术的发展前景。
Development in infrared focal plane arrays(IRFPAs) is reviewed including photon IRFPAs and thermal IRFPAs. The former contains Ⅱ-Ⅵ HgCdTe ternary compound arrays, Ⅲ-Ⅴ InSb binary compound arrays, Ⅲ-Ⅴ InGaAs and GaAlAs ternary compounds arrays, and PtSi and extrinsic silicon arrays. The thermal IRFPAs include Si, Ti, and VO x microbolometer arrays, polycrystal silicon thermopile arrays and BST pyroelectro-ferroelectric arrays, etc. The prospects of the development in their technologies are forecasted.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第A03期29-32,共4页
Semiconductor Optoelectronics
