摘要
研究和分析了高辐射GaAlAs/GaAs LED的退化机理。经高温加速老化,估算器件的工作寿命为10~5小时,并估算该器件的激活能为0.58eV。
The failure mechanism is investigated on the GaAlAs/GaAs surface LED's. The evaluated value of the operating lifetime for the device is about 10~5h with the activation energy of 0.58eV under the condition of high temperature accelerating aging.
出处
《半导体光电》
CAS
CSCD
北大核心
1991年第2期133-140,共8页
Semiconductor Optoelectronics
